SE20FD Datasheet, PDF (1/6 Pages) Vishay Siliconix – Ideal for automated placement

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SE20FD, SE20FG, SE20FJ
Vishay General Semiconductor
Surface Mount Standard Rectifiers
eSMP^® Series
Top view
Bottom view
DO-219AB (SMF)
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 2.0 A (T_A = 125 °C)
I_R
T_J max.
Package
2.0 A
200 V, 400 V, 600 V
35 A
0.85 V
5 μA
175 °C
DO-219AB (SMF)
Diode variations
Single die
TYPICAL APPLICATIONS
General purpose, power line polarity protection, in
commercial, industrial, and automotive applications.
FEATURES
• Low profile package
Available
• Ideal for automated placement
• Oxide planar chip junction
• Low forward voltage drop, low leakage current
• ESD capability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Wave and reflow solderable
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: DO-219AB (SMF)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - for, halogen-free, and RoHS-compliant
Base P/NHM3 - for halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SE20FD
Device marking code
CD
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
V_RRM
I_F(AV) ⁽¹⁾
I_F(AV) ⁽²⁾
I_FSM
200
Operating junction and storage temperature range
T_J, T_STG
Notes
(1) _{Mounted on 10 mm x 10 mm pad areas, 2 oz. FR4 PCB}
(2) _{Free air, mounted on recommended copper pad area}
SE20FG
CG
400
2.0
1.7
35
-55 to +175
SE20FJ
CJ
600
UNIT
V
A
A
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
Reverse current
Typical reverse recovery time
Typical junction capacitance
I_F = 2.0 A
T_A = 25 °C
T_A = 125 °C
Rated V_R
T_A = 25 °C
T_A = 125 °C
I_F = 0.5 A, I_R = 1.0 A, I_rr = 0.25 A
4.0 V, 1 MHz
V_F ⁽¹⁾
I_R ⁽²⁾
t_rr
C_J
0.96
0.85
-
7.6
920
13
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
MAX.
1.10
1.00
5
100
-
-
UNIT
V
μA
ns
pF
Revision: 01-Sep-16
1
Document Number: 87724
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000