English
Language : 

SBL8L40_15 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Schottky Barrier Rectifier
www.vishay.com
SBL8L40, SBLF8L40, SBLB8L40
Vishay General Semiconductor
Schottky Barrier Rectifier
TO-220AC
ITO-220AC
SBL8L40
PIN 1
PIN 2
2
1
CASE
TO-263AB
K
SBLF8L40
PIN 1
PIN 2
2
1
2
1
SBLB8L40
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ max.
8A
40 V
250 A
0.41 V
125 °C
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020C, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AC and ITO-220AC package)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters and polarity protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at (Fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per leg
VRRM
VRWM
VDC
IF(AV)
IFSM
Peak repetitive reverse current at tp = 2 ms, 1 kHz
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Isolation voltage (ITO-220AC only)
from terminal to heatsink t = 1 min
IRRM
dV/dt
TJ, TSTG
VAC
VALUE
40
28
40
8
250
1.0
10 000
- 65 to + 125
1500
UNIT
V
A
V/μs
°C
V
Revision: 15-Jun-12
1
Document Number: 88825
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000