English
Language : 

SBL10L30_15 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Low VF Schottky Barrier Rectifier
www.vishay.com
SBL10L30, SBLF10L30, SBLB10L30
Vishay General Semiconductor
Low VF Schottky Barrier Rectifier
TO-220AC
ITO-220AC
SBL10L30
PIN 1
PIN 2
CASE
2
1
TO-263AB
K
2
1
SBLF10L30
PIN 1
PIN 2
FEATURES
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Very low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AC and ITO-220AC package)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
2
1
SBLB10L30
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ max.
10 A
30 V
200 A
0.43 V
150 °C
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, OR-ring diode, freewheeling diodes,
DC/DC converters and polarity protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
VRRM
Working peak reverse voltage
VRWM
Maximum DC blocking voltage
Maximum average forward rectified current at TC = 140 °C
VDC
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
Peak repetitive reverse surge current
at tp = 2.0 µs, 1 kHz
Voltage rate of change (rated VR)
IRRM
dV/dt
Operating junction and storage temperature range
TJ, TSTG
Isolation voltage (ITO-220AC only)
from terminal to heatsink t = 1 min
VAC
VALUE
30
21
30
10
200
1.0
10 000
- 65 to + 150
1500
UNIT
V
A
V/μs
°C
V
Revision: 14-Jun-12
1
Document Number: 88724
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000