SB5H90_09 Datasheet, PDF (1/4 Pages) Vishay Siliconix – High-Voltage Schottky Rectifier

SB5H90, SB5H100
Vishay General Semiconductor
High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
DO-201AD
FEATURES
• Guardring for overvoltage protection
• Low power losses and high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
I_F(AV)
5.0 A
V_RRM
90 V, 100 V
I_FSM
200 A
V_F
0.70 V
I_R
200 μA
T_J max.
175 °C
TYPICAL APPLICATIONS
For use in middle voltage high frequency inverters,
freewheeling, dc-to-dc converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T_C = 80 °C
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
V_RRM
V_RWM
V_DC
I_F(AV)
I_FSM
Peak repetitive reverse surge current at t_p = 2.0 μs, 1 kHz
Storage temperature range
Maximum operating junction temperature
I_RRM
T_STG
T_J
SB5H90
90
90
90
SB5H100
100
100
100
5.0
200
1.0
- 55 to + 175
175
UNIT
V
V
V
A
A
A
°C
°C
Document Number: 88722 For technical questions within your region, please contact one of the following:
Revision: 04-Aug-09
[e-mail], [e-mail], [e-mail]
www.vishay.com
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