SB3H90_08 Datasheet, PDF (1/4 Pages) Vishay Siliconix – High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance

New Product
SB3H90 & SB3H100
Vishay General Semiconductor
High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
DO-201AD
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
I_R
T_J max.
3.0 A
90 V, 100 V
100 A
0.65 V
20 µA
175 °C
FEATURES
• Guardring for overvoltage protection
• Low power losses and high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in middle voltage high frequency
inverters, freewheeling, dc-to-dc converters, and
polarity protection applications.
MECHANICAL DATA
Case: DO-201AD
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum working reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T_L = 90 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
V_RRM
V_RWM
V_DC
I_F(AV)
I_FSM
Peak repetitive reverse surge current at t_p = 2.0 µs, 1 kHz
Critical rate of rise of reverse voltage
I_RRM
dV/dt
Storage temperature range
Maximum operating junction temperature
T_STG
T_J
SB3H90
90
90
90
SB3H100
100
100
100
3.0
100
1.0
10 000
- 55 to + 175
175
UNIT
V
V
V
A
A
A
V/µs
°C
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SB3H90
Maximum instantaneous forward
voltage ⁽¹⁾
I_F = 3.0 A
I_F = 3.0 A
T_J = 25 °C
T_J = 125 °C
V_F
Maximum reverse current
at rated V_R ⁽²⁾
T_J = 25 °C
T_J = 125 °C
I_R
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
SB3H100
0.80
0.65
20
4.0
Document Number: 88720 For technical questions within your region, please contact one of the following:
Revision: 19-May-08
[e-mail], [e-mail], [e-mail]
UNIT
V
µA
mA
www.vishay.com
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