SB320S Datasheet, PDF (1/5 Pages) EIC discrete Semiconductors – SCHOTTKY BARRIER RECTIFIER DIODES

New Product
SB320S thru SB360S
Vishay General Semiconductor
Schottky Barrier Rectifier
DO-204AC (DO-15)
PRIMARY CHARACTERISTICS
I_F(AV)
3.0 A
V_RRM
20 V to 60 V
I_FSM
100 A
V_F
0.50 V, 0.70 V
T_J max.
125 °C, 150 °C
FEATURES
• Very small conduction losses
• Extremely fast switching
• Low forward voltage drop
• High frequency operation
• 20 kV ESD capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, dc-to-dc converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-204AC (DO-15)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL SB320S SB330S SB340S SB350S SB360S
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at 0.375" (9.5 mm) lead length (fig. 1)
V_RRM
20
30
40
50
60
V_RMS
14
21
28
35
42
V_DC
20
30
40
50
60
I_F(AV)
3.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
100
Electrostatic discharge capacitor voltage
human body model air discharge: C = 100 pF, R = 1.5 kΩ
V_C
20
Voltage rate of change (rated V_R)
Operating junction temperature range
Storage temperature range
dV/dt
T_J
T_STG
10 000
- 65 to + 125
- 65 to + 150
- 65 to + 150
UNIT
V
V
V
A
A
kV
V/μs
°C
°C
Document Number: 88819 For technical questions within your region, please contact one of the following:
Revision: 19-Oct-09
[e-mail], [e-mail], [e-mail]
www.vishay.com
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