SB1H90_08 Datasheet, PDF (1/4 Pages) Vishay Siliconix – High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance

New Product
SB1H90 & SB1H100
Vishay General Semiconductor
High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
DO-204AL (DO-41)
FEATURES
• High barrier technology for improved high T_J
• Guardring for overvoltage protection
• Low power losses and high efficiency
• Low forward voltage drop
• Very low leakage current
• High forward surge capability
• High frequency operation
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
I_R
T_J max.
1.0 A
90 V, 100 V
50 A
0.62 V
1.0 µA
175 °C
TYPICAL APPLICATIONS
For use in middle voltage high frequency inverters,
freewheeling, dc-to-dc converters and polarity
protection applications.
MECHANICAL DATA
Case: DO-204AL (DO-41)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
Voltage rate of change (rated V_R)
Peak repetitive reverse surge current at t_p = 2.0 µs, 1 kHz
Maximum operating junction temperature
Storage temperature range
dV/dt
I_RRM
T_J
T_STG
SB1H90
90
63
90
SB1H100
100
70
100
1.0
50
10 000
1.0
175
- 55 to + 175
UNIT
V
V
V
A
A
V/µs
A
°C
°C
Document Number: 88716 For technical questions within your region, please contact one of the following:
Revision: 19-May-08
[e-mail], [e-mail], [e-mail]
www.vishay.com
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