S852TW Datasheet, PDF (1/8 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

Not for new design, this product will be obsoleted soon
S852T / S852TW
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Features
• Low supply voltage
• Low current consumption
• 50 Ω input impedance at 945 MHz
e3
• Low noise figure
• High power gain
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
1
SOT-23
2
3
1
SOT-323
23
19239
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 0.2 mA to 5 mA.
Mechanical Data
Typ: S852T
Case: SOT-23 Plastic case
Weight: approx. 8.0 mg
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Typ: S852TW
Case: SOT-323 Plastic case
Weight: approx. 6.0 mg
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Parts Table
Part
S852T
S852TW
852
W52
Marking
SOT-23
SOT-323
Package
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
T_amb ≤ 125 °C
Storage temperature range
Symbol
Value
Unit
V_CBO
12
V
V_CEO
6
V
V_EBO
2
V
I_C
8
mA
P_tot
30
mW
T_j
150
°C
T_stg
- 65 to + 150
°C
Document Number 85052
Rev. 1.5, 08-Sep-08
www.vishay.com
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