S852TF_08 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

Not for new design, this product will be obsoleted soon
S852TF
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Description
The main purpose of this bipolar transistor is broad-
band amplification up to 2 GHz. In the space-saving
3-pin surface-mount SOT-490 package electrical per-
formance and reliability are taken to a new level cov-
ering a smaller footprint on PC boards than previous
packages.
In addition to space savings, the SOT-490 provides a
higher level of reliability than other 3-pin packages,
such as more resistance to moisture.
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16867
Electrostatic sensitive device.
Observe precautions for handling.
Due to the short length of its leads the SOT-490 is
also reducing package inductances resulting in some
better electrical performance. All of these aspects
make this device an ideal choice for demanding RF
applications.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 0.2 mA to 5 mA.
Features
• Low supply voltage
• Low current consumption
e3
• Low noise figure
• 50 Ω input impedance at 945 MHz
• High power gain
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Typ: S852TF
Case: SOT-490 Plastic case
Weight: approx. 2.5 mg
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Parts Table
Part
S852TF
Marking
52
SOT-490
Package
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
T_amb ≤ 125 °C
Storage temperature range
Symbol
Value
Unit
V_CBO
12
V
V_CEO
6
V
V_EBO
2
V
I_C
8
mA
P_tot
30
mW
T_j
150
°C
T_stg
- 65 to + 150
°C
Document Number 85104
Rev. 1.4, 05-Sep-08
www.vishay.com
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