S525T-GS08 Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel MOS-Fieldeffect Triode, Depletion Mode

Not for new design, this product will be obsoleted soon
S525T
Vishay Semiconductors
N-Channel MOS-Fieldeffect Triode, Depletion Mode
Features
• Integrated gate protection diodes
• Low feedback capacitance
e3
• Low noise figure
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
High frequency stages up to 300 MHz.
Mechanical Data
Case: SOT-23 Plastic case
Weight: approx. 8.0 mg
Pinning: 1 = Source, 2 = Gate , 3 = Drain
1
23
D
G
S
18237
Electrostatic sensitive device.
Observe precautions for handling.
Parts Table
Part
S525T
Marking
LB
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Drain - source voltage
Drain current
Gate - source peak current
Total power dissipation
Channel temperature
T_amb ≤ 60 °C
Storage temperature range
Symbol
V_DS
I_D
± I_GSM
P_tot
T_Ch
T_stg
Maximum Thermal Resistance
Parameter
Channel ambient
Test condition
1)
1) _{on glass fibre printed board (25 x 20 x 1.5) mm}3 _{plated with 35 μm Cu}
Symbol
R_thChA
SOT-23
Package
Value
Unit
20
V
30
mA
10
mA
200
mW
150
°C
- 55 to + 150
°C
Value
Unit
450
K/W
Document Number 85045
Rev. 1.6, 08-Sep-08
www.vishay.com
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