S4PG-M3 Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Current Density Surface Mount

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S4PB thru S4PM
Vishay General Semiconductor
High Current Density Surface Mount
Glass Passivated Rectifiers
eSMP ^® Series
K
1
2
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
I_R
V_F at I_F = 4 A
T_J max.
4.0 A
100 V to 1000 V
100 A
10 μA
0.860 V
150 °C
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Glass passivated chip junction
• Low forward voltage drop
• High surge capability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer,
automotive, and telecommunication.
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL S4PB
Device marking code
S4PB
Maximum repetitive peak reverse voltage
V_RRM
100
Average forward current
I_F(AV)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I_FSM
Operating junction and storage temperature range
T_J, T_STG
S4PD
S4PD
200
S4PG S4PJ
S4PG S4PJ
400
600
4.0
100
- 55 to + 150
S4PK
S4PK
800
S4PM
S4PM
1000
UNIT
V
A
A
°C
Revision: 05-Jul-12
1
Document Number: 89032
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000