S350P Datasheet, PDF (1/5 Pages) Vishay Siliconix – Silicon NPN Phototransistor

Silicon NPN Phototransistor
Description
S350P is a high sensitive silicon NPN epitaxial planar
phototransistor in a miniature plastic case with flat win-
dow.
With a lead center–to–center spacing of 2.54mm and
a package width of 2.4mm the devices are easily
stackable on PC boards and assembled to arrays of
unlimited size.
The epoxy package itself is an IR filter, spectrally
matched to GaAs IR emitters with l_p > 850nm.
Features
D High radiant sensitivity
D Miniature T–¾ flat plastic package with IR filter
D Very wide angle of half sensitivity ϕ = ± 40°
D Suitable for near infrared radiation
D Suitable for 0.1” (2.54 mm) center–to–center
spacing
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
T_amb = 25_C
Parameter
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
x t_p/T = 0.5, t_p 10 ms
x T_amb 55 °C
xt 3 s
S350P
Vishay Telefunken
94 8640
Symbol
Value
Unit
V_CEO
V_ECO
I_C
I_CM
P_tot
T_j
T_stg
T_sd
R_thJA
32
V
5
V
50
mA
100
mA
100
mW
100
°C
–55...+100 °C
260
°C
450
K/W
Document Number 81543
Rev. 2, 20-May-99
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