S330D_10 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Standard Avalanche Sinterglass Diode

S330D
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
949539
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Controlled avalanche characteristics
• Low reverse current
• Compliant to RoHS directive 2002/95/EC and
in accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
APPLICATIONS
• High voltage
• Power supplies
PARTS TABLE
PART
S330D
TYPE DIFFERENTIATION
V_R = 1000 V; I_FAV = 2 A
PACKAGE
SOD-57
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
Reverse voltage = repetitive peak
reverse voltage
See electrical characteristics
S330D
V_R = V_RRM
Peak forward surge current
t_p = 10 ms, half sine wave
I_FSM
Average forward current
T_amb = 50 °C, I = 10 mm
I_FAV
Pulse energy in avalanche mode, non
repetitive (inductive load switch off)
I_(BR)R = 1 A, inductive load
E_R
Junction and storage
temperature range
T_j = T_stg
VALUE
1000
50
2
20
- 55 to + 175
UNIT
V
A
A
mJ
°C
MAXIMUM THERMAL RESISTANCE (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
Junction ambient
Lead length l = 10 mm, T_L = constant
R_thJA
45
UNIT
K/W
ELECTRICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
Forward voltage
Reverse current
Breakdown voltage
Reverse recovery time
I_F = 1 A
I_F = 10 A
V_R = V_RRM
V_R = V_RRM, T_j = 100 °C
I_R = 100 μA
I_F = 0.5 A, I_R = 1 A, i_R = 0.25 A
V_F
V_F
I_R
I_R
V_(BR)R
t_rr
-
-
-
-
1300
-
TYP.
-
-
-
-
-
-
MAX
1
1.65
5
50
-
4
UNIT
V
V
μA
μA
V
μs
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For technical questions within your region, please contact one of the following: Document Number: 86053
[e-mail], [e-mail], [e-mail]
Rev. 1.6, 25-Aug-10