S1PA Datasheet, PDF (1/2 Pages) Vishay Siliconix – High Current Density Surface Mount Glass-Passivated Rectifiers

New Product
S1PA thru S1PJ
Vishay Semiconductors
formerly General Semiconductor
0.086 (2.18)
0.074 (1.88)
0.013 (0.35)
0.004 (0.10)
High Current Density Surface Mount
Case Style SMP
Cathode band
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
Glass-Passivated Rectifiers
Features
Reverse Voltage 50 to 600 V
Forward Current 1.0 A
• Very low profile - typical height of 1.0mm
• Ideal for automated placement
• Glass passivated chip junction
• For use in rectification, power supply, home appliances
and telecommunication
• High temperature soldering:
260°C maximum/10 seconds at terminals
• Meets MSL level 1 per J-STD-020C
Mechanical Data
0.012 (0.30)
0.000 (0.00)
0.045 (1.15)
0.033 (0.85)
0.018 (0.45)
0.006 (0.15)
Case: SMP
Terminals: Matte Tin plated (E3 Suffix) leads, solderable
per J-STD-002B and MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Weight: 0.0009 oz., 0.024 g
Epoxy meets UL 94V-0 flammability rating
Mounting Pad Layout
0.012 (0.30) REF
Dimensions in inches
and (millimeters)
0.105
(2.67)
0.025
(0.635)
0.030
(0.762)
0.053 (1.35)
0.041 (1.05)
0.036 (0.91)
0.024 (0.61)
0.100
(2.54)
0.050
(1.27)
0.103 (2.60)
0.087 (2.20)
0.032 (0.80)
0.016 (0.40)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Device marking code
Maximum reverse voltage
Maximum average forward rectified current Fig.1
Peak forward surge current 10ms single half sine-wave
superimposed on rated load
Typical thermal resistance ⁽¹⁾
Operating junction temperature
Storage temperature
Symbol
VRM
IF(AV)
IFSM
RθJA
RθJL
RθJC
TJ,
TSTG
S1PA
SA
50
S1PB
SB
100
S1PD
SD
200
1
S1PG
SG
400
30
105
15
20
150
–55 to +150
S1PJ Unit
SJ
600
V
A
A
°C/W
°C
°C
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Maximum instantaneous forward voltage⁽²⁾ at IF=1A, TJ=25°C
at IF=1A, TJ=125°C
VF
1.1
0.95
V
Maximum reverse current
at rated VR⁽²⁾
TJ = 25°C
TJ =125°C
IR
1.0
50
µA
Typical reverse recovery time at
at IF = 0.5A, IR = 1.0A, Irr = 0.25A
trr
1.8
µs
Typical junction capacitance at 4.0V, 1MHz
CJ
6.0
pF
Notes: (1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0mm copper pad areas. RθJL is measured at the ter-
minal of cathode band. RθJC is measured at the top centre of the body
(2) Pulse test: 300µs pulse width, 1% duty cycle
Document Number 88917
23-Sep-04
www.vishay.com
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