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S1BA Datasheet, PDF (1/4 Pages) Vishay Siliconix – Standard Surface Mount Glass Passivated Rectifier
Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011
S1BA thru S1MA
Vishay General Semiconductor
Standard Surface Mount Glass Passivated Rectifier
DO-214AC (SMA)
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
IR
VF at IF = 1.0 A
TJ max.
1.0 A
100 V to 1000 V
30 A
3.0 μA
0.861 V
150 °C
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters, and freewheeling diodes for consumer
and telecommunication.
Note
• These devices are not AEC-Q101 qualified.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL S1BA
Device marking code
BA
Maximum repetitive peak reverse voltage
Average forward current
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
VRRM
IF(AV)
IFSM
100
Operating junction and storage temperature range
TJ, TSTG
S1DA
DA
200
S1GA S1JA
GA
JA
400
600
1.0
30
- 55 to + 150
S1KA
KA
800
S1MA
MA
1000
UNIT
V
A
A
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
Reverse current
Typical reverse recovery time
Typical junction capacitance
IF = 1.0 A
TJ = 25 °C
TJ = 125 °C
Rated VR
TJ = 25 °C
TJ = 125 °C
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
4.0 V, 1 MHz
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
VF (1)
IR (2)
trr
CJ
0.960
0.861
0.09
20
1.0
8
MAX.
1.1
-
3
80
-
-
UNIT
V
μA
μs
pF
Document Number: 88968 For technical questions within your region, please contact one of the following:
Revision: 14-Jan-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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