S1AFG Datasheet, PDF (1/4 Pages) Vishay Siliconix – Glass passivated pellet chip junction

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S1AFG, S1AFJ, S1AFK, S1AFM
Vishay General Semiconductor
Surface Mount Glass Passivated Rectifier
TMBS^® SlimSMA^TM
Top View
Bottom View
DO-221AC
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
I_R
V_F at I_F = 1.0 A (125 °C)
T_J max.
Package
1.0 A
400 V, 600 V, 800 V, 1000 V
35 A
5 μA
0.85 V
150 °C
DO-221AC (SlimSMA)
Diode variations
Single die
FEATURES
• Very low profile - typical height of 0.95 mm
• Ideal for automated placement
• Glass passivated pellet chip junction
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer,
and industrial applications
MECHANICAL DATA
Case: DO-221AC (SlimSMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
S1AFG
Device marking code
SG
Maximum repetitive peak reverse voltage
V_RRM
400
Maximum average forward rectified current
I_F(AV) ⁽¹⁾
Peak forward surge current 10 ms single half sine-wave 
superimposed on rated load
I_FSM
Operating junction and storage temperature range
T_J, T_STG
Notes
(1) _{Free air, mounted on recommended copper pad area}
S1AFJ
S1AFK
SJ
SK
600
800
1.0
35
-55 to +150
S1AFM
SM
1000
UNIT
V
A
A
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
Max. reverse current
Typical reverse recovery time
Typical junction capacitance
I_F = 0.5 A
I_F = 1.0 A
T_A = 25 °C
I_F = 0.5 A
I_F = 1.0 A
T_A = 125 °C
Rated V_R
T_A = 25 °C
T_A = 125 °C
I_F = 0.5 A, I_R = 1.0 A, I_rr = 0.25 A
4.0 V, 1 MHz
V_F ⁽¹⁾
I_R ⁽²⁾
t_rr
C_J
0.90
0.95
0.78
0.85
-
-
1.47
7.9
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
MAX.
-
1.1
-
0.98
5.0
100
-
-
UNIT
V
μA
μs
pF
Revision: 21-Jan-15
1
Document Number: 87739
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000