S186P Datasheet, PDF (1/6 Pages) Vishay Siliconix – Silicon PIN Photodiode

Silicon PIN Photodiode
S186P
Vishay Semiconductors
Description
S186P is a high speed and high sensitive PIN photo-
diode in a flat side view plastic package. The epoxy
package itself is an IR filter, spectrally matched to
GaAs or GaAs on GaAlAs IR emitters (λ _p ≥ 900 nm).
The large active area combined with a flat case gives
a high sensitivity at a wide viewing angle
Features
94 8632
• Fast response times
• Small junction capacitance
• High radiant sensitivity
• Large radiant sensitive area A = 7.5 mm²
• Wide angle of half sensitivity ϕ = ± 65 °
• Plastic case with IR filter (950 mm)
• Suitable for near infrared radiation
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
High speed photo detector
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse Voltage
Power Dissipation
Junction Temperature
T_amb ≤ 25 °C
Storage Temperature Range
Soldering Temperature
t≤5s
Thermal Resistance Junction/
Ambient
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Breakdown Voltage
I_R = 100 µA, E = 0
Reverse Dark Current
V_R = 10 V, E = 0
Diode capacitance
V_R = 0 V, f = 1 MHz, E = 0
V_R = 3 V, f = 1 MHz, E = 0
Symbol
Value
Unit
V_R
60
V
P_V
215
mW
T_j
100
°C
T_stg
- 55 to + 100
°C
T_sd
260
°C
R_thJA
350
K/W
Symbol
Min
Typ.
Max
Unit
V_(BR)
60
V
I_ro
2
30
nA
C_D
70
pF
C_D
25
40
pF
Document Number 81536
Rev. 1.3, 08-Mar-05
www.vishay.com
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