RS1PG-M3 Datasheet, PDF (1/4 Pages) Vishay Siliconix – High Current Density Surface Mount Glass Passivated Fast Switching Rectifier

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RS1PB, RS1PD, RS1PG, RS1PJ
Vishay General Semiconductor
High Current Density Surface Mount Glass Passivated
Fast Switching Rectifier
eSMP ^® Series
DO-220AA (SMP)
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
t_rr
I_R
V_F
T_J max.
Package
1.0 A
100 V, 200 V, 400 V, 600 V
30 A
150 ns, 250 ns
1 μA
1.3
150 °C
DO-220AA (SMP)
Diode variation
Single die
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive and telecommunication.
FEATURES
• Very low profile - typical height of 1.0 mm
Available
• Ideal for automated placement
• Glass passivated chip junction
• Fast switching for high efficiency
• Low thermal resistance
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 10 ms single half sine-wave superimposed
on rated load
V_RRM
I_F(AV)
I_FSM
Operating junction and storage temperature range
T_J, T_STG
RS1PB
RB
100
RS1PD RS1PG
RD
RG
200
400
1.0
30
- 55 to + 150
RS1PJ
RJ
600
UNIT
V
A
A
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL RS1PB
Maximum instantaneous forward voltage
Maximum reverse current at rated 
V_R voltage
Maximum reverse recovery time
Typical junction capacitance
I_F = 1.0 A
T_A = 25 °C
T_A = 125 °C
I_F = 0.5 A, I_R = 1.0 A,
I_rr = 0.25 A
4.0 V, 1 MHz
V_F ⁽¹⁾
I_R ⁽²⁾
t_rr
C_J
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
RS1PD RS1PG
1.3
1.0
60
150
9
RS1PJ UNIT
V
μA
250
ns
pF
Revision: 21-Aug-13
1
Document Number: 88934
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000