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RGP25A Datasheet, PDF (1/4 Pages) General Semiconductor – GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER
RGP25A thru RGP25M
Vishay General Semiconductor
Glass Passivated Junction Fast Switching Rectifier
SUPERECTIFIER®
DO-201AD
PRIMARY CHARACTERISTICS
IF(AV)
2.5 A
VRRM
50 V to 1000 V
IFSM
100 A
trr
150 ns, 250 ns, 500 ns
IR
5.0 μA
VF
1.3 V
TJ max.
175 °C
FEATURES
• Superectifier structure for high reliability condition
• Cavity-free glass-passivated junction
• Fast switching for high efficiency
• Low leakage current, typical IR less than 0.2 μA
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For general purpose of medium frequency rectification.
MECHANICAL DATA
Case: DO-201AD, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL RGP25A RGP25B RGP25D RGP25G RGP25J
Maximum repetitive peak
reverse voltage
VRRM
50
100
200
400
600
Maximum RMS voltage
VRMS
35
Maximum DC blocking voltage
VDC
50
Maximum average forward
rectified current 0.375" (9.5 mm)
lead length at TA = 55 °C
IF(AV)
Peak forward surge current
8.3 ms single half sine-wave
IFSM
superimposed on rated load
70
140
280
420
100
200
400
600
2.5
100
Maximum full load reverse
current, full cycle average 0.375"
(9.5 mm) lead length at TA = 55 °C
Operating junction and storage
temperature range
IR(AV)
TJ, TSTG
100
- 65 to + 175
RGP25K
800
560
800
RGP25M UNIT
1000
V
700
V
1000
V
A
A
μA
°C
Document Number: 88703 For technical questions within your region, please contact one of the following:
Revision: 15-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000