RGF1A_11 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Surface Mount Glass Passivated Junction Fast Switching Rectifier

RGF1A thru RGF1M
Vishay General Semiconductor
Surface Mount Glass Passivated Junction Fast Switching Rectifier
SUPERECTIFIER^®
DO-214BA (GF1)
PPRIMARY CHARACTERISTICS
I_F(AV)
1.0 A
V_RRM
50 V to 1000 V
I_FSM
30 A
V_F
1.3 V
t_rr
150 ns, 250 ns, 500 ns
T_J max.
175 °C
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
FEATURES
• Superectifier structure for high reliability condition
• Ideal for automated placement
• Fast switching for high efficiency
• Low leakage current
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Meets MSL level 1, per J-STD-020, LF maximum peak of
250 °C
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case: DO-214BA, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Two bands indicate cathode end - 1^st band
denotes device type and 2^nd band denotes repetitive peak
reverse voltage rating
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M UNIT
Device marking code
RA
RB
RD
RG
RJ
RK
RM
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T_L = 120 °C
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
V_RRM
50
100
200
400
600
800 1000
V
V_RMS
35
70
140
280
420
560
700
V
V_DC
50
100
200
400
600
800 1000
V
I_F(AV)
1.0
A
I_FSM
30
A
Maximum full load reverse current, full cycle
average T_A = 55 °C
I_R(AV)
50
μA
Operating junction and storage temperature range T_J, T_STG
- 65 to + 175
°C
Document Number: 88697 For technical questions within your region, please contact one of the following:
Revision: 15-Mar-11
[e-mail], [e-mail], [e-mail]
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000