|
RFPS43N50K Datasheet, PDF (1/8 Pages) Vishay Siliconix – RFPS43N50K | |||
|
IRFPS43N50K, SiHFPS43N50K
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
350
85
180
Single
0.078
D
SUPER-247TM
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
⢠Low Gate Charge Qg Results in Simple Drive
Requirement
⢠Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
⢠Fully Characterized Capacitance and Avalanche Voltage
and Current
⢠Low RDS(on)
⢠Lead (Pb)-free Available
APPLICATIONS
⢠Switch Mode Power Supply (SMPS)
⢠Uninterruptible Power Supply
⢠High Speed Power Switching
⢠Hard Switched and High Frequency Circuits
SUPER-247TM
IRFPS43N50KPbF
SiHFPS43N50K-E3
IRFPS43N50K
SiHFPS43N50K
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 0.82 mH, RG = 25 Ω, IAS = 47 A (see fig. 12c).
c. ISD ⤠47 A, dI/dt ⤠230 A/µs, VDD ⤠VDS, TJ ⤠150 °C.
d. 1.6 mm from case.
LIMIT
500
± 30
47
29
190
4.3
910
47
54
540
9.0
- 55 to + 150
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91262
S-81367-Rev. B, 21-Jul-08
www.vishay.com
1
|
▷ |