English
Language : 

P4SMA Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – Surface Mount Transient Voltage Suppressor
P4SMA Series
Vishay General Semiconductor
Surface Mount TRANSZORB® Transient Voltage Suppressors
DO-214AC (SMA)
PRIMARY CHARACTERISTICS
VBR uni-directional
VBR bi-directional
PPPM
PD
IFSM (uni-directional only)
TJ max.
6.8 V to 540 V
6.8 V to 220 V
400 W, 300 W
3.3 W
40 A
150 °C
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g.
P4SMA10CA).
Electrical characteristics apply in both directions.
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
400 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty
cycle): 0.01 % (300 W above 91 V)
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against
voltage transients induced by inductive load switching
and lighting on ICs, MOSFET, signal lines of
sensor units for consumer, computer, industrial and
telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Peak power dissipation with a 10/1000 µs waveform (1)(2) (Fig. 1)
Peak pulse current with a 10/1000 µs waveform (1) (Fig. 3)
PPPM
IPPM
400
See next table
Power dissipation on infinite heatsink, TA = 50 °C
PD
3.3
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
IFSM
40
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2. Rating is 300 W above 91 V
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
UNIT
W
A
W
A
°C
Document Number: 88367 For technical questions within your region, please contact one of the following:
Revision: 21-Oct-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1