P4KE550A-E3 Datasheet, PDF (1/4 Pages) Vishay Siliconix – TRANSZORB Transient Voltage Suppressors

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P4KE530, P4KE550
Vishay General Semiconductor
TRANSZORB^® Transient Voltage Suppressors
DO-204AL (DO-41)
PRIMARY CHARACTERISTICS
V_WM
V_BR uni-directional
P_PPM
P_D
V_C
T_J max.
Polarity
477 V, 495 V
530 V, 550 V
300 W
1.0 W
760 A
150 °C
Uni-directional
Package
DO-204AL (DO-41)
FEATURES
• Glass passivated chip junction
• Available in uni-directional only
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case: DO-204L, molded epoxy over passivated chip
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant and commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Peak pulse power dissipation ⁽¹⁾⁽²⁾ (fig.1)
Power dissipation on infinite heatsink at T_L = 75 °C (fig. 4)
Operating junction and storage temperature range
P_PPM
P_D
T_J, T_STG
Notes
(1) _{Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2}
(2) _{Peak pulse power waveform is 10/1000 μs}
P4KE530
P4KE550
300
1.0
-55 to +150
UNIT
W
W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
DEVICE TYPE
BREAKDOWN VOLTAGE
V_BR AT I_T
(V)
MIN.
TEST CURRENT
I_T
(μA)
P4KE530
530
100
P4KE550
550
100
STAND-OFF VOLTAGE
V_WM
(V)
477
495
ADDITIONAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Max. clamping voltage
Maximum DC reverse leakage current
Typical temperature coefficient
Typical capacitance
400 mA, 10/1000 μs waveform
V_C
at V_WM
I_D
of V_BR
1 MHz, V_R = 0 V
C_J
1 MHz, V_R = 200 V
C_J
P4KE530
P4KE550
760
1.0
650
90
7.5
UNIT
V
μA
mV/°C
pF
pF
Revision: 18-Nov-13
1
Document Number: 88366
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