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P4KA6.8_11 Datasheet, PDF (1/5 Pages) Vishay Siliconix – PAR Transient Voltage Suppressors
P4KA6.8 thru P4KA43A
Vishay General Semiconductor
PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
DO-204AL (DO-41)
PRIMARY CHARACTERISTICS
VBR
PPPM
PD
IFSM
TJ max.
6.8 V to 43 V
400 W
1.5 W
40 A
185 °C
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive, and
telecommunication.
FEATURES
• Junction passivation optimized design
passivated anisotropic rectifier technology
• TJ = 185 °C capability suitable for high
reliability and automotive requirement
• Available in uni-directional polarity only
• 400 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty cycle):
0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case: DO-204AL, molded epoxy over passivated
junction
Molding compound meets UL 94 V-0 flammability
rating
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Peak pulse power dissipation with a 10/1000 µs waveform (1) (fig. 1)
Peak pulse current with a 10/1000 µs waveform (1) (fig. 3)
PPPM
IPPM
Power dissipation on infinite heatsink at TL = 75 °C (fig. 5)
Peak forward surge current 8.3 ms single half sine-wave (2)
PD
IFSM
Maximum instantaneous forward voltage at 25 A
VF
Operating junction and storage temperature range
TJ, TSTG
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
(2) All terms and symbols are consistent with ANSI/IEEE C62.35
VALUE
400
See next table
1.5
40
3.5
- 65 to + 185
UNIT
W
A
W
A
V
°C
Document Number: 88364 For technical questions within your region, please contact one of the following:
Revision: 09-Feb-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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