MUR440-E3 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Ultrafast Plastic Rectifier

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MUR440-E3, MUR460-E3
Vishay General Semiconductor
Ultrafast Plastic Rectifier
DO-201AD
FEATURES
• Glass passivated pellet chip junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
t_rr
V_F at I_F
T_J max.
Package
4.0 A
400 V, 600 V
150 A
50 ns
1.05 V
175 °C
DO-201AD
Diode variations
Single die
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, and telecommunication.
MECHANICAL DATA
Case: DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
Operating junction and storage temperature range
SYMBOL
V_RRM
V_RWM
V_DC
I_F(AV)
I_FSM
T_J, T_STG
MUR440 MUR460
400
600
400
600
400
600
4.0
150
-65 to +175
UNIT
V
A
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
3.0 A
Maximum instantaneous forward voltage
4.0 A
T_J = 150 °C
T_J = 25 °C
Maximum instantaneous reverse current
at rated DC blocking voltage
Max. reverse recovery time
Maximum reverse recovery time
Maximum forward recovery time
T_J = 25 °C
T_J = 150 °C
I_F = 0.5, I_R = 1.0 A, I_rr = 0.25 A
I_F = 1.0 A, dI/dt = 50 A/μs, V_R = 30 V, I_rr = 10 % I_RM
I_F = 1.0 A, dI/dt = 100 A/μs, recovery to 1.0 V
Note
(1) _{Pulse test: tp = 300 μs, duty cycle 2 %}
SYMBOL
V_F ⁽¹⁾
I_R ⁽¹⁾
t_rr
t_rr
t_fr
MUR440 MUR460
1.05
1.25
1.28
10
250
50
75
50
UNIT
V
μA
ns
Revision: 19-Feb-16
1
Document Number: 88686
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000