MSS1P5-M3 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Surface Mount Schottky Barrier Rectifiers

New Product
MSS1P5 & MSS1P6
Vishay General Semiconductor
Surface Mount Schottky Barrier Rectifiers
eSMP ^TM Series
Top View
Bottom View
MicroSMP
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 1.0 A
T_J max.
1A
50 V, 60 V
25 A
0.52 V
150 °C
FEATURES
• Very low profile - typical height of 0.65 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
free-wheeling, dc-to-dc converters, and polarity
protection applications.
MECHANICAL DATA
Case: MicroSMP
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (see Fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
V_RRM
I_F(AV)
I_FSM
Operating junction and storage temperature range
T_J, T_STG
MSS1P5
MSS1P6
15
16
50
60
1.0
25
- 55 to + 150
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Maximum instantaneous
forward voltage ⁽¹⁾
at I_F = 0.5 A,
at I_F = 1.0 A,
T_J = 25 °C
V_F
at I_F = 0.5 A,
at I_F = 1.0 A,
T_J = 125 °C
0.45
0.56
0.40
0.52
Maximum reverse current ⁽¹⁾
at rated V_R
T_J = 25 °C
T_J = 125 °C
I_R
20
7.0
Typical junction capacitance
at 4.0 V, 1 MHz
C_J
40
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
MAX.
-
0.68
-
0.60
150
12
-
UNIT
V
A
A
°C
UNIT
V
µA
mA
pF
Document Number: 89018
Revision: 09-Aug-07
www.vishay.com
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