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MSP5.0A_11 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Surface Mount TRANSZORB Transient Voltage Suppressors
New Product
MSP5.0A
Vishay General Semiconductor
Surface Mount TRANSZORB® Transient Voltage Suppressors
eSMP ® Series
Top View
Bottom View
MicroSMP
PRIMARY CHARACTERISTICS
VWM
5.0 V
PPPM
100 W
IFSM
25 A
TJ max.
150 °C
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units specifically for
protecting 5.0 V supplied sensitive equipment against
transient overvoltages.
FEATURES
• Very low profile - typical height of 0.65 mm
• Ideal for automated placement
• Oxide planar chip junction
• Uni-directional polarity only
• Peak pulse power: 100 W (10/1000 μs)
• ESD capability: 15 kV (air), 8 kV (contact)
• Meets MSL level 1, per J-STD-020C, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: MicroSMP
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation
Peak pulse current with a 10/1000 μs waveform (fig. 1)
Non repetitive peak forward surge current 10 ms single half sine-wave
Power dissipation TL = 120 °C
Operating junction and storage temperature range
Notes
(1) Non-repetitive current pulse, per fig. 1
(2) Mounted on 6.0 mm x 6.0 mm copper pads to each terminal
SYMBOL
PPPM (1)(2)
IPPM
IFSM (2)
PD (2)
TJ, TSTG
VALUE
100
10.9
25
1.0
- 55 to + 150
UNIT
W
A
A
W
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
VBR AT IT (V) (1)
MIN. MAX.
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
MAX. REVERSE
LEAKAGE
AT VWM
ID ( A)
MAX. CLAMPING
VOLTAGE (2)
VC (V) AT IPPM (A)
10/1000 s
MSP5.0A
AE
6.40 7.07
10
5.0
100
9.2
10.9
Notes
(1) Pulse test: tp  50 ms
(2) Surge current waveform per fig. 1 and derate per fig. 2
MAX. CLAMPING
VOLTAGE (2)
VC (V) AT IPPM (A)
8/20 s
14.5
57
Document Number: 88487 For technical questions within your region, please contact one of the following:
Revision: 19-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
23
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000