MSP3V3_10 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Surface Mount TRANSZORB Transient Voltage Suppressors

New Product
MSP3V3
Vishay General Semiconductor
Surface Mount TRANSZORB^® Transient Voltage Suppressors
eSMP ^TM Series
Top View
Bottom View
MicroSMP
PRIMARY CHARACTERISTICS
V_WM
3.3 V
P_PPM
100 W
I_FSM
25 A
T_J max.
150 °C
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units specifically for
protecting 3.3 V supplied sensitive equipment against
transient overvoltages.
FEATURES
• Very low profile - typical height of 0.65 mm
• Ideal for automated placement
• Oxide planar chip junction
• Uni-directional polarity only
• Peak pulse power: 100 W (10/1000 μs)
• ESD capability: 15 kV (air), 8 kV (contact)
• Meets MSL level 1, per J-STD-020C, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: MicroSMP
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Base P/NHM3 - halogen-free and RoHS compliant,
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation
Peak pulse current with a 10/1000 μs waveform (fig. 1)
Peak pulse current with a 8/20 μs waveform (fig. 1)
Non repetitive peak forward surge current 8.3 ms single half sine-wave
Power dissipation T_L = 120 °C
Operating junction and storage temperature range
Notes
(1) _{Non-repetitive current pulse, per fig. 1}
(2) _{Mounted on 6.0 mm x 6.0 mm copper pads to each terminal}
SYMBOL
P_PPM ⁽¹⁾⁽²⁾
I_PPM
I_PPM
I_FSM ⁽²⁾
P_D ⁽²⁾
T_J, T_STG
VALUE
100
13.7
75
25
1.0
- 55 to + 150
UNIT
W
A
A
A
W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
MIN.
BREAKDOWN
VOLTAGE
V_{BR AT IT}
MAX. REVERSE
LEAKAGE
CURRENT
I_R AT V_WM
MAX. CLAMPING
VOLTAGE AT V_C
AT I_PPM(10/1000
μs)
MAX. CLAMPING
VOLTAGE AT V_C
AT I_PPM(8/20 μs)
V
mA
μA
V
V
A
V
A
TYPICAL
TEMPERATURE
COEFFICIENT
OF V_BR
(10^-4/°C)
TYP. JUNCTION
CAPACITANCE
C_J AT 0 V
(1 MHZ)
pF
MSP3V3
KC
4.1 1.0
200
3.3
7.3
13.7
11.0
75
- 5.3
850
Document Number: 88486 For technical questions within your region, please contact one of the following:
Revision: 23-Apr-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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