MMBZ4625-V-GS08 Datasheet, PDF (1/3 Pages) Vishay Siliconix – Small Signal Zener Diodes

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MMBZ4617-V to MMBZ4627-V
Vishay Semiconductors
Small Signal Zener Diodes
3
1
2
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
V_Z range nom.
Test current I_ZT
V_Z specification
Int. construction
2.4 to 6.2
0.25
Pulse current
Single
UNIT
V
mA
FEATURES
• Silicon planar low noise Zener diodes
• 350 mW high quality voltage regulator designed
for low leakage, low current and low noise
applications
• 5 % tolerance on V_Z
• High temperature soldering
260 °C/4 x 10 s at terminals
guaranteed:
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
ORDERING INFORMATION
DEVICE NAME
MMBZ4617-V to MMBZ4627-V
MMBZ4617-V to MMBZ4627-V
ORDERING CODE
MMBZ4617-V to
MMBZ4627-V-series-GS18
MMBZ4617-V to
MMBZ4627-V-series-GS08
TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
10 000 (8 mm tape on 13" reel)
10 000/box
3000 (8 mm tape on 7" reel)
15 000/box
PACKAGE
PACKAGE NAME
SOT-23
WEIGHT
8.8 mg
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Power dissipation
On FR - 5 board using recommended solder pad
layout
P_tot
Forward voltage, maximum
I_F = 200 mA
V_F
Forward voltage, typical
Junction to ambient air
I_F = 200 mA
On FR - 5 board using recommended solder pad
layout
V_F
R_thJA
Junction temperature, maximum
T_j
Storage temperature range
T_stg
VALUE
350
1.1
0.97
420
150
- 55 to + 150
UNIT
mW
V
V
°C/W
°C
°C
Rev. 1.5, 05-Oct-11
1
Document Number: 85770
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