MMBZ27VDA-V_12 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Small Signal Zener Diodes, Dual

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MMBZ27VDA-V
Vishay Semiconductors
Small Signal Zener Diodes, Dual
3
1
2
Common anode
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
V_Z range nom.
Test current I_ZT
V_Z specification
Int. construction
27
1
Pulse current
Dual
UNIT
V
mA
FEATURES
• Dual silicon planar Zener diodes with common
anode configurations
• Dual package provides for bidirectional or
separate unidirectional configurations
• The dual configurations protect two separate
lines with only one device
• Peak power: 40 W at 1 ms (bidirectional)
• For bidirectional operation, circuit connected to pins 1 and
2. For unidirectional operation, circuit connected to pins 1
and 3 or pins 2 and 3
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
MMBZ27VDA-V
MMBZ27VDA-V-GS18
MMBZ27VDA-V
MMBZ27VDA-V-GS08
TAPED UNITS PER REEL
10 000 (8 mm tape on 13" reel)
3000 (8 mm tape on 7" reel)
MINIMUM ORDER QUANTITY
10 000
15 000
PACKAGE
PACKAGE NAME
SOT-23
WEIGHT
8.8 mg
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Peak power dissipation ⁽¹⁾
P_PK
Power dissipation on FR-5 board ⁽²⁾
T_amb = 25 °C,
derate above 25 °C
P_tot
Power dissipation on alumina substrate ⁽³⁾
T_amb = 25 °C,
derate above 25 °C
Thermal resistance, junction to ambient air
Storage temperature range
Notes
(1) _{Nonrepetitive current pulse per figure 2 and derate above Tamb = 25 °C per figure 3}
(2) _{FR-5 = 1" x 0.75" x 0.62"}
(3) _{Alumina = 0.4" x 0.3" x 0.024", 99.5 % alumina.}
P_tot
R_thJA
T_j, T_stg
VALUE
40
225
1.8
300
2.4
556
- 55 to + 150
UNIT
W
mW
mW/K
mW
mW/K
K/W
°C
Rev. 1.2, 14-Sep-11
1
Document Number: 81294
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