MI2050C Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual Common-Cathode Schottky Rectifier

New Product
MI2050C & MI2060C
Vishay General Semiconductor
Dual Common-Cathode Schottky Rectifier
TO-262AA
K
23
1
MI20xxC
PIN 1
PIN 2
PIN 3
CASE
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 10 A
T_J max.
10 A x 2
50 V, 60 V
150 A
0.570 V
150 °C
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
OR-ing diodes, dc-to-dc converters or polarity
protection applications.
MECHANICAL DATA
Case: TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
total device
per diode
V_RRM
I_F(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I_FSM
Peak repetitive reverse current per leg at t_p = 2 µs, 1 kHz
Voltage rate of change (rated V_R)
Operating junction temperature range
Storage temperature range
per diode
I_RRM
dV/dt
T_J
T_STG
MI2050C
MI2060C
50
60
20
10
150
0.5
10 000
- 65 to + 150
- 65 to + 175
UNIT
V
A
A
A
V/µs
°C
°C
Document Number: 89007 For technical questions within your region, please contact one of the following:
Revision: 19-May-08
[e-mail], [e-mail], [e-mail]
www.vishay.com
1