MCL4151 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Silicon Epitaxial Planar Diode

Silicon Epitaxial Planar Diode
Features
D Electrical data identical with the device 1N4151
D Micro Melf package
MCL4151
Vishay Telefunken
Applications
Extreme fast switches
96 12315
Absolute Maximum Ratings
T_j = 25_C
Parameter
Test Conditions
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
t_p=1ms
Repetitive peak forward current
Forward current
Average forward current
Power dissipation
V_R=0
Junction temperature
Storage temperature range
Type
Symbol Value
Unit
V_RRM
75
V
V_R
50
V
I_FSM
2
A
I_FRM
450
mA
I_F
200
mA
I_FAV
150
mA
P_V
500
mW
T_j
175
°C
T_stg –65...+175 °C
Maximum Thermal Resistance
T_j = 25_C
Parameter
Test Conditions
Junction ambient
mounted on epoxy–glass hard tissue, Fig. 1, 35mm
copper clad, 0.9 mm² copper area per electrode
Symbol Value Unit
R_thJA
500
K/W
Document Number 85567
Rev. 3, 01-Apr-99
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