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MBRF1090CT_15 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual High Voltage Trench MOS Barrier Schottky Rectifier
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MBRF1090CT, MBRF10100CT
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
TMBS®
ITO-220AB
PIN 1
PIN 3
123
PIN 2
FEATURES
• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ max.
Package
2 x 5.0 A
90 V, 100 V
120 A
0.75 V
150 °C
ITO-220AB
Diode variations
Common cathode
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Max. repetitive peak reverse voltage
Working peak reverse voltage
Max. DC blocking voltage
Max. average forward rectified current at TC = 105 °C
total device
per diode
VRRM
VRWM
VDC
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave 
superimposed on rated load per diode
IFSM
Non-repetitive avalanche energy 
at TJ = 25 °C, L = 60 mH per diode
Peak repetitive reverse current at tp = 2 μs, 1 kHz, 
TJ = 38 °C ± 2 °C per diode
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Isolation voltage from terminal to heatsink with t = 1 min
EAS
IRRM
dV/dt
TJ, TSTG
VAC
MBRF1090CT MBRF10100CT
90
100
90
100
90
100
10
5.0
120
60
0.5
10 000
- 65 to + 150
1500
UNIT
V
V
V
A
A
mJ
A
V/μs
°C
V
Revision: 16-Aug-13
1
Document Number: 89126
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000