MBRB735 Datasheet, PDF (1/6 Pages) General Semiconductor – SCHOTTKY RECTIFIER

MBRB7.. Series
Vishay High Power Products
Schottky Rectifier, 7.5 A
Base
cathode
2
D²PAK
1
N/C
3
Anode
PRODUCT SUMMARY
I_F(AV)
V_R
I_RM
7.5 A
35/45 V
15 mA at 125 °C
FEATURES
• 150 °C T_J operation
• High frequency operation
• Low forward voltage drop
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified for Q101 level
DESCRIPTION
The MBRB7.. Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
Rectangular waveform
I_FSM
t_p = 5 µs sine
V_F
7.5 Apk, T_J = 125 °C
T_J
Range
VALUES
7.5
35/45
690
0.57
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
V_R
Maximum working peak reverse voltage V_RWM
MBRB735
35
MBRB745
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
I_F(AV)
Non-repetitive peak surge current
I_FSM
Non-repetitive avalanche energy
E_AS
Repetitive avalanche current
I_AR
TEST CONDITIONS
VALUES UNITS
T_C = 131 °C, rated V_R
7.5
Following any rated load condition
5 µs sine or 3 µs rect. pulse
690
A
and with rated V_RRM applied
Surge applied at rated load condition halfwave single phase 60 Hz 150
T_J = 25 °C, I_AS = 2 A, L = 3.5 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
7
mJ
2
A
Document Number: 93982
Revision: 22-Aug-08
For technical questions, contact: [e-mail]
www.vishay.com
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