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MBRB3035CT Datasheet, PDF (1/6 Pages) Vishay Siliconix – Schottky Rectifier, 2 x 15 A
MBRB30..CT/MBR30..CT-1
Vishay High Power Products
Schottky Rectifier, 2 x 15 A
MBRB30..CT
MBR30..CT-1
Base
common
cathode
2
Base
common
cathode
2
2
1 Common 3
Anode cathode Anode
D2PAK
2
1 Common 3
Anode cathode Anode
TO-262
PRODUCT SUMMARY
IF(AV)
VR
IRM
2 x 15 A
35/45 V
100 mA at 125 °C
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
IFRM
VRRM
IFSM
VF
TJ
Rectangular waveform (per device)
TC = 123 °C (per leg)
tp = 5 µs sine
20 Apk, TJ = 125 °C
Range
FEATURES
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
• Center tap D2PAK and TO-262 packages
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified for Q101 level
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C junction
temperature. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
VALUES
30
30
35/45
1020
0.6
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VR
Maximum working peak reverse voltage VRWM
MBRB3035CT
MBR3035CT-1
35
MBRB3045CT
MBR3045CT-1
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
per leg
per device
IF(AV)
Peak repetitive forward current per leg
IFRM
Non-repetitive peak surge current
IFSM
Non-repetitive avalanche energy per leg EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
VALUES
15
TC = 123 °C, rated VR
30
Rated VR, square wave, 20 kHz, TC = 123 °C
Following any rated load condition
5 µs sine or 3 µs rect. pulse
and with rated VRRM applied
30
1020
Surge applied at rated load conditions halfwave,
200
single phase, 60 Hz
TJ = 25 °C, IAS = 2 A, L = 5 mH
10
Current decaying linearly to zero in 1 µs
2
Frequency limited by TJ maximum VA = 1.5 x VR typical
UNITS
A
mJ
A
Document Number: 93980
Revision: 21-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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