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MBRB25CT Datasheet, PDF (1/6 Pages) Vishay Siliconix – High frequency operation
MBRB25..CT/MBR25..CT-1
Vishay High Power Products
Schottky Rectifier, 2 x 15 A
MBRB25..CT
MBR25..CT-1
Base
common
cathode
2
Base
common
cathode
2
FEATURES
• 150 °C TJ operation
• Center tap D2PAK and TO-262 packages
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified for Q101 level
2
1 Common 3
Anode cathode Anode
2
1 Common 3
Anode cathode Anode
D2PAK
TO-262
PRODUCT SUMMARY
IF(AV)
VR
IRM
2 x 15 A
35/45 V
40 mA at 125 °C
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C junction
temperature. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
IFRM
VRRM
IFSM
VF
TJ
Rectangular waveform (per device)
TC = 130 °C (per leg)
tp = 5 µs sine
30 Apk, TJ = 125 °C
Range
VALUES
30
30
35/45
1060
0.73
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR
VRWM
MBRB2535CT
MBR2535CT-1
35
MBRB2545CT
MBR2545CT-1
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
per leg
per device
IF(AV)
Peak repetitive forward current per leg
IFRM
Non-repetitive peak surge current
IFSM
Non-repetitive avalanche energy per leg
EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
VALUES UNITS
15
TC = 130 °C, rated VR
30
Rated VR, square wave, 20 kHz, TC = 130 °C
30
Following any rated load condition
A
5 µs sine or 3 µs rect. pulse
1060
and with rated VRRM applied
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
150
TJ = 25 °C, IAS = 2 A, L = 8 mH
Current decaying linearly to zero in 1 µs
Frequency limited by TJ maximum VA = 1.5 x VR typical
16
mJ
2
A
Document Number: 93979
Revision: 21-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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