MBRB2090CT-M3 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Lower power losses, high efficiency

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MBRB2090CT-M3, MBRB20100CT-M3
Vishay General Semiconductor
Dual Common-Cathode High-Voltage Schottky Rectifier
TMBS ^®
TO-263AB
K
2
1
MBRB2090CT
MBRB20100CT
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
Package
TO-263AB
I_F(AV)
V_RRM
I_FSM
V_F
T_J max.
Diode variation
2 x 10 A
90 V, 100 V
150 A
0.65 V
150 °C
Common cathode
FEATURES
• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters, or
polarity protection application.
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T_C = 133 °C
total device
per diode
Peak forward surge current 8.3 ms single half sine-wave superimposed on
rated load per diode
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
SYMBOL
V_RRM
V_RWM
V_DC
I_F(AV)
I_FSM
dV/dt
T_J, T_STG
MBRB2090CT MBRB20100CT
90
100
90
100
90
100
20
10
150
10 000
- 65 to + 150
UNIT
V
V
V
A
A
V/μs
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
I_F = 10 A
T_C = 25 °C
Maximum instantaneous forward voltage 
per diode ⁽¹⁾
I_F = 10 A
T_C = 125 °C
V_F
I_F = 20 A
T_C = 125 °C
Maximum reverse current per diode at
working peak reverse voltage ⁽²⁾
T_J = 25 °C
T_J = 125 °C
I_R
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
MAX.
0.80
0.65
0.75
100
6.0
UNIT
V
μA
mA
Revision: 15-May-13
1
Document Number: 87980
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000