MBRB2080CTPBF_10 Datasheet, PDF (1/8 Pages) Vishay Siliconix – Schottky Rectifier, 2 x 10 A

VS-MBRB20...CTPbF, VS-MBR20...CT-1PbF Series
Vishay High Power Products
Schottky Rectifier, 2 x 10 A
VS-MBRB20...CTPbF
VS-MBR20 ...CT-1PbF
Base
common
cathode
2
Base
common
cathode
2
2
1 _Common 3
Anode cathode Anode
D²PAK
2
1 _Common 3
Anode cathode Anode
TO-262
PRODUCT SUMMARY
I_F(AV)
V_R
2 x 10 A
80 V to 100 V
FEATURES
• 150 °C T_J operation
• Low forward voltage drop
• High frequency operation
• Center tap D²PAK and TO-262 packages
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Halogen-free according to IEC 61249-2-21 definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
DESCRIPTION
This center tap Schottky rectifier has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
I_FRM
V_RRM
I_FSM
V_F
T_J
Rectangular waveform (per device)
T_C = 133 °C (per leg)
t_p = 5 μs sine
10 Apk, T_J = 125 °C
Range
VALUES
20
20
80 to 100
850
0.70
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
VS-MBRB2080CTPbF VS-MBRB2090CTPbF VS-MBRB20100CTPbF
VS-MBR2080CT-1PbF VS-MBR2090CT-1PbF VS-MBR20100CT-1PbF
80
90
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
per leg
per device
I_F(AV)
Peak repetitive forward current per leg
I_FRM
Non-repetitive peak surge current
I_FSM
Peak repetitive reverse surge current
I_RRM
Non-repetitive avalanche energy per leg E_AS
TEST CONDITIONS
T_C = 133 °C, rated V_R
Rated V_R, square wave, 20 kHz, T_C = 133 °C
5 μs sine or
Following any rated load ondition
3 μs rect. pulse and with rated V_RRM applied
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
2.0 μs, 1.0 kHz
T_J = 25 °C, I_AS = 2 A, L = 12 mH
VALUES
10
20
20
850
150
0.5
24
UNITS
A
mJ
Document Number: 94306
Revision: 16-Mar-10
For technical questions, contact: [e-mail]
www.vishay.com
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