MBRB1635PBF Datasheet, PDF (1/6 Pages) Vishay Siliconix – Schottky Rectifier, 16 A

MBRB16..PbF
Vishay High Power Products
Schottky Rectifier, 16 A
Base
cathode
2
D²PAK
1
N/C
3
Anode
PRODUCT SUMMARY
I_F(AV)
V_R
I_RM
16 A
35/45 V
40 mA at 125 °C
FEATURES
• 150 °C T_J operation
• High frequency operation
• Low forward voltage drop
• High purity, high temperature
Available
RoHS*
COMPLIANT
epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for Q101 level
DESCRIPTION
This MBRB16.. Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
Rectangular waveform
V_RRM
I_FSM
t_p = 5 µs sine
V_F
16 Apk, T_J = 125 °C
T_J
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
MBRB1635PbF
35
VALUES
16
35/45
1800
0.57
- 65 to 150
MBRB1645PbF
45
UNITS
A
V
A
V
°C
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
I_F(AV)
Non-repetitive peak surge current
I_FSM
Non-repetitive avalanche energy
E_AS
Repetitive avalanche current
I_AR
TEST CONDITIONS
T_C = 134 °C, rated V_R
Following any rated
5 µs sine or 3 µs rect. pulse load condition and with
rated V_RRM applied
Surge applied at rated load condition halfwave single
phase 60 Hz
T_J = 25 °C, I_AS = 3.6 A, L = 3.7 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
* Pb containing terminations are not RoHS compliant, exemptions may apply
VALUES
16
1800
150
24
3.6
UNITS
A
mJ
A
Document Number: 94304
Revision: 15-Aug-08
For technical questions, contact: [e-mail]
www.vishay.com
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