MBRB1535CT_15 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Dual Common Cathode Schottky Rectifier

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MBR(F,B)1535CT thru MBR(F,B)1560CT
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
TO-220AB
ITO-220AB
MBR15xxCT
PIN 1
PIN 2
PIN 3
CASE
3
2
1
TO-263AB
K
123
MBRF15xxCT
PIN 1
PIN 2
PIN 3
2
1
MBRB15xxCT
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
T_J max.
7.5 A x 2
35 V to 60 V
150 A
0.57 V, 0.65 V
150 °C
FEATURES
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR1535CT MBR1545CT MBR1550CT MBR1560CT UNIT
Maximum repetitive peak reverse voltage
V_RRM
35
45
50
60
Working peak reverse voltage
V_RWM
35
45
50
60
V
Maximum DC blocking voltage
V_DC
35
45
50
60
Maximum average forward rectified current ^{total device}
at T_C = 105 °C
per diode
I_F(AV)
15
7.5
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I_FSM
150
A
Peak repetitive reverse surge current per diode
at t_p = 2.0 µs, 1 kHz
I_RRM
1.0
0.5
Voltage rate of change (rated V_R)
dV/dt
10 000
V/μs
Operating junction temperature range
T_J
- 65 to + 150
°C
Storage temperature range
T_STG
- 65 to + 175
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
V_AC
1500
V
Revision: 27-Jun-12
1
Document Number: 88670
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000