MBRB1035 Datasheet, PDF (1/6 Pages) General Semiconductor – SCHOTTKY RECTIFIER

MBRB10.. Series
Vishay High Power Products
Schottky Rectifier, 10 A
Base
cathode
2
D²PAK
1
N/C
3
Anode
PRODUCT SUMMARY
I_F(AV)
V_R
I_RM
10 A
35/45 V
15 mA at 125 °C
FEATURES
• 150 °C T_J operation
• D²PAK package
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified for Q101 level
DESCRIPTION
This Schottky rectifier has been optimized for low reverse
leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C junction
temperature. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
I_FRM
Rectangular waveform
T_C = 135 °C
V_RRM
I_FSM
t_p = 5 µs sine
V_F
10 Apk, T_J = 125 °C
T_J
Range
VALUES
10
20
35/45
1060
0.57
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
Maximum working peak reverse voltage
V_R
V_RWM
MBRB1035
35
MBRB1045
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
Peak repetitive forward current
I_F(AV)
I_FRM
Non-repetitive surge current
I_FSM
Non-repetitive avalanche energy
E_AS
Repetitive avalanche current
I_AR
TEST CONDITIONS
VALUES UNITS
T_C = 135 °C, rated V_R
10
Rated V_R, square wave, 20 kHz, T_C = 135 °C
20
Following any rated load condition
5 µs sine or 3 µs rect. pulse
1060
A
and with rated V_RRM applied
Surge applied at rated load conditions halfwave,
150
single phase, 60 Hz
T_J = 25 °C, I_AS = 2 A, L = 4 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
8
mJ
2
A
Document Number: 93975
Revision: 22-Aug-08
For technical questions, contact: [e-mail]
www.vishay.com
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