English
Language : 

MBRA140TRPBF_10 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Schottky Rectifier, 1.0 A
VS-MBRA140TRPbF
Vishay High Power Products
Schottky Rectifier, 1.0 A
SMA
Cathode
Anode
PRODUCT SUMMARY
IF(AV)
VR
IRM
1.0 A
40 V
26 mA at 125 °C
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
1.0 Apk, TJ = 125 °C
TJ
Range
FEATURES
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The VS-MBRA140TRPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
VALUES
1.0
40
120
0.49
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-MBRA140TRPbF
40
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 4
IF(AV)
Maximum peak one cycle non-repetitive
surge current
IFSM
See fig. 6
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
VALUES
50 % duty cycle at TL = 118 °C, rectangular waveform
On PC board 9 mm2 island (0.013 mm thick copper pad area)
1.0
5 μs sine or 3 μs rect. pulse
Following any rated load
120
condition and with rated
10 ms sine or 6 ms rect. pulse VRRM applied
30
TJ = 25 °C, IAS = 1 A, L = 6 mH
3.0
Current decaying linearly to zero in 1 μs
1.0
Frequency limited by TJ maximum VA = 1.5 x VR typical
UNITS
A
mJ
A
Document Number: 94301
Revision: 04-Mar-10
For technical questions, contact: diodestech@vishay.com
www.vishay.com
1