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MBR7H35_15 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Schottky Barrier Rectifier
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MBR(F,B)7H35 thru MBR(F,B)7H60
Vishay General Semiconductor
Schottky Barrier Rectifier
High Barrier Technology for Improved HighTemperature Performance
TO-220AC
ITO-220AC
MBR7Hxx
PIN 1
PIN 2
2
1
CASE
TO-263AB
K
2
1
MBRF7Hxx
PIN 1
PIN 2
2
1
MBRB7Hxx
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
IR
TJ max.
7.5 A
35 V to 60 V
150 A
0.55 V, 0.61 V
50 μA
175 °C
FEATURES
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AC and ITO-220AC package)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters and polarity protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current (Fig.1)
Non-repetitive avalanche energy at 25 °C, IAS = 4 A, L =10 mH
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
VRWM
VDC
IF(AV)
EAS
IFSM
Peak repetitive reverse surge current at tp = 2.0 µs, 1 kHz
Peak non-repetitive reverse energy (8/20 μs waveform)
Electrostatic discharge capacitor voltage human body model:
C = 100 pF, R = 1.5 k
IRRM
ERSM
VC
Operating junction and storage temperature range
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AC only) from terminal to heatsink
t = 1 min
TJ, TSTG
dV/dt
VAC
MBR7H35
35
35
35
MBR7H45 MBR7H50
45
50
45
50
45
50
7.5
80
MBR7H60
60
60
60
150
1.0
0.5
20
10
25
- 65 to + 175
10 000
1500
UNIT
V
A
mJ
A
mJ
kV
°C
V/μs
V
Revision: 15-Jun-12
1
Document Number: 88796
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000