MBR745PBF Datasheet, PDF (1/6 Pages) Vishay Siliconix – Schottky Rectifier, 7.5 A

MBR7..PbF Series
Vishay High Power Products
Schottky Rectifier, 7.5 A
TO-220AC
Base
cathode
2
1
3
Cathode Anode
PRODUCT SUMMARY
I_F(AV)
V_R
I_RM
7.5 A
35 to 45 V
15 mA at 125 °C
FEATURES
• 150 °C T_J operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• High frequency operation
Pb-free
Available
RoHS*
COMPLIANT
• Low forward voltage drop
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
DESCRIPTION
The MBR7..PbF Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C junction
temperature. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
Rectangular waveform
I_FSM
t_p = 5 µs sine
V_F
7.5 Apk, T_J = 125 °C
T_J
Range
VALUES
7.5
35 to 45
690
0.57
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
MBR735PbF
35
MBR745PbF
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
I_F(AV)
Non-repetitive peak surge current
I_FSM
Non-repetitive avalanche energy
E_AS
Repetitive avalanche current
I_AR
TEST CONDITIONS
VALUES
T_C = 131 °C, rated V_R
7.5
Following any rated load
5 µs sine or 3 µs rect. pulse condition and with rated 690
V_RRM applied
Surge applied at rated load condition half wave
150
single phase 60 Hz
T_J = 25 °C, I_AS = 2 A, L = 3.5 mH
7
Current decaying linearly to zero in 1 µs
2
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
UNITS
A
A
mJ
A
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94299
Revision: 20-Aug-08
For technical questions, contact: [e-mail]
www.vishay.com
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