MBR60100CT_08 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual Common-Cathode High Voltage Schottky Rectifier

New Product
MBR60100CT
Vishay General Semiconductor
Dual Common-Cathode High Voltage Schottky Rectifier
TO-220AB
PIN 1
PIN 3
1 ²³
PIN 2
CASE
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 30 A
T_J max.
30 A x 2
100 V
350 A
0.64 V
175 °C
FEATURES
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
total device
per diode
V_RRM
V_RWM
V_DC
I_F(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
I_FSM
Peak repetitive reverse current per diode at t_p = 2 µs, 1 kHz
Peak non-repetitive reverse surge energy per diode (8/20 µs waveform)
Non-repetitive avalanche energy per diode at 25 °C, I_AS = 1.0 A, L = 40 mH
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
I_RRM
E_RSM
E_AS
dV/dt
T_J, T_STG
MBR60100CT
100
100
100
60
30
350
1.0
25
20
10 000
- 65 to + 175
UNIT
V
V
V
A
A
A
mJ
mJ
V/µs
°C
Document Number: 88892 For technical questions within your region, please contact one of the following:
Revision: 19-May-08
[e-mail], [e-mail], [e-mail]
www.vishay.com
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