MBR40H60PT Datasheet, PDF (1/3 Pages) Vishay Siliconix – Dual Schottky Barrier Rectifier

MBR40H35PT thru MBR40H60PT
New Product
Vishay Semiconductors
formerly General Semiconductor
Dual Schottky Barrier Rectifier
Reverse Voltage 35 to 60 V
Forward Current 40 A
TO-247AD (TO-3P)
0.245 (6.2)
0.225 (5.7)
0.645 (16.4)
0.625 (15.9)
0.840 (21.3)
0.820 (20.8)
0.323 (8.2)
0.313 (7.9)
0.203 (5.16)
0.193 (4.90)
30
0.170
(4.3)
0.142 (3.6)
0.138 (3.5)
10 TYP.
BOTH SIDES
1
2
3
0.086 (2.18)
0.076 (1.93)
0.160 (4.1)
0.140 (3.5)
0.795 (20.2)
0.775 (19.6)
0.225 (5.7)
0.205 (5.2)
0.127 (3.22)
0.117 (2.97)
PIN 1
PIN 3
0.118 (3.0)
0.108 (2.7)
PIN 2
CASE
0.048 (1.22)
0.044 (1.12)
0.030 (0.76)
0.020 (0.51)
0.078 REF
(1.98)
10 °
1 REF.
BOTH
SIDES
Features
• Plastic package has Underwriters Laboratory
Flammability Classifications 94 V-0
• Dual rectifier construction, positive center-tap
• Metal silicon junction, majority carrier conduction
• High surge capability
• Low forward voltage drop, low power loss
and high efficiency
• For use in low voltage, high frequency inverters,
free-wheeling, and polarity protection applications
• Guardring for overvoltage protection
• Rated for reverse surge and ESD
• 175 °C maximum operation junction temperature
Mechanical Data
Case: JEDEC TO-247AD molded plastic body
Terminals: Lead solderable per MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds, 0.17” (4.3 mm) from case
Polarity: As marked
Mounting Position: Any Mounting Torque: 10 in-lbs max.
Weight: 0.2 oz., 5.6 g
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol MBR40H35PT MBR40H45PT MBR40H50PT MBR40H60PT Unit
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Maximum working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
V
Maximum average forward rectified current (See Fig. 1)
IF(AV)
40
A
Peak repetitive forward current per leg at TC = 155 °C
(rated VR, square wave, 20 KHZ)
IFRM
40
A
Non-repetitive avalanche energy per leg
at 25 °C, IAS = 4 A, L = 10 mH
EAS
80
mJ
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
IFSM
400
A
Peak repetitive reverse surge current ⁽¹⁾
IRRM
2.0
1.0
A
Peak non-repetitive reverse energy (8/20 µs waveform)
ERSM
30
25
mJ
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 kΩ
VC
25
kV
Thermal resistance from junction to case per leg
RθJC
1.2
°C/W
Voltage rate of change at (rated VR)
dv/dt
10,000
V/µs
Operating junction temperature range
TJ
– 65 to +175
°C
Storage temperature range
TSTG
– 65 to +175
°C
Document Number 88794
4-Feb-03
www.vishay.com
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