MBR40H35CT_15 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual Common Cathode Schottky Rectifiers

MBR40H35CT, MBR40H45CT, MBR40H50CT, MBR40H60CT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifiers
High Barrier Technology for Improved High Temperature Performance
TO-220AB
PIN 1
PIN 3
1 ²³
PIN 2
CASE
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
2 x 20 A
35 V, 45 V, 50 V, 60 V
350 A, 320 A
V_F at I_F = 20 A
0.55 V, 0.60 V
I_R
T_J max.
Package
Diode variations
100 μA
175 °C
TO-220AB
Dual Common Cathode
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max., 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR40H35CT MBR40H45CT MBR40H50CT MBR40H60CT UNIT
Maximum repetitive peak reverse voltage
V_RRM
35
45
50
60
V
Maximum average forward rectified ^{total device}
current (fig. 1)
per diode
I_F(AV)
40
A
20
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
I_FSM
350
320
A
Peak repetitive reverse surge current per diode 
at t_p = 2 μs, 1 kHz
Peak non-repetitive reverse surge energy 
(8/20 μs waveform) per diode
I_RRM
E_RSM
1.0
A
20
mJ
Non-repetitive avalanche energy 
at 25 °C, I_AS = 3.0 A, L = 5 mH per diode
Voltage rate of change (rated V_R)
E_AS
dV/dt
22.5
10 000
mJ
V/μs
Operating junction and storage temperature range T_J, T_STG
- 65 to + 175
°C
Revision: 13-Aug-13
1
Document Number: 88920
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000