MBR40H35CT Datasheet, PDF (1/3 Pages) Vishay Siliconix – Dual Schottky Barrier Rectifiers

MBR40H35CT thru MBR40H60CT
New Product
Vishay Semiconductors
formerly General Semiconductor
Dual Schottky Barrier Rectifiers
Reverse Voltage 35V to 60V
Forward Current 40A
Max. Junction Temperature 175°C
0.055 (1.40)
0.047 (1.20)
0.067
(1.70) Typ.
TO-220AB (MBR40HxxCT)
0.398 (10.10)
0.382 (8.70)
0.343 (8.70) Typ.
0.150 (3.80)
Dia.
0.139 (3.54)
0.114 (2.90)
0.106 (2.70)
0.154 (3.90)
0.138 (3.50)
0.118
(3.00) Typ.
0.331 (8.40) Typ.
PIN
1 23
0.634 (16.10)
0.618 (15.70)
0.370 (9.40)
0.354 (9.00)
1.161 (29.48)
1.105 (28.08)
0.035 (0.90)
0.028 (0.70)
0.100
(2.54) Typ.
PIN 1
PIN 3
PIN 2
CASE
0.523 (13.28)
0.507 (12.88)
0.064 (1.62)
0.056 (1.42)
0.200 (5.08) Typ.
0.024 (0.60)
0.018 (0.45)
0.185 (4.70)
0.169 (4.30)
0.055 (1.40)
0.049 (1.25)
0.638 (16.20)
0.598 (15.20)
0.102 (2.60)
0.087 (2.20)
Features
• Dual rectifier construction, positive center tap
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency
• Guardring for overvoltage protection
• For use in high frequency inverters,
free wheeling, and polarity protection applications
Mechanical Data
Case: JEDEC TO-220AB molded plastic body
Terminals: Plated leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds, 0.25" (6.35mm) from case
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08oz., 2.24g
Epoxy meets UL 94V-0 flammability rating
Dimensions in inches
and (millimeters)
Maximum Ratings (TC = 25°C unless otherwise noted)
Parameter
MBR40H MBR40H MBR40H MBR40H
Symbol 35CT 45CT 50CT 60CT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
Working peak reverse voltage
VRWM
35
45
50
60
Maximum DC blocking voltage
VDC
35
45
50
60
Maximum average forward rectified current
(see fig. 1)
Total device
Per leg
IF(AV)
40
20
Peak forward surge current
8.3ms single half sine-wave superimposed
IFSM
350
320
on rated load
Per leg
Peak repetitive reverse current per leg at tp = 2µs, 1KHZ IRRM
1.0
Peak non-repetitive reverse surge energy
(8/20µs waveform)
Per leg ^ERSM
20
Non-repetitive avalanche energy
at 25°C, IAS = 3.0A, L=5mH
Per leg ^EAS
22.5
Voltage rate of change (rated VR)
dv/dt
10,000
Operating junction and storage temperature range
TJ, TSTG
–65 to +175
Unit
V
V
V
A
A
A
mJ
mJ
V/µs
°C
Document Number 88920
14-Jul-04
www.vishay.com
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