MBR4060WT Datasheet, PDF (1/6 Pages) Vishay Siliconix – Schottky Rectifier, 2 x 20 A

MBR4060WT
Vishay High Power Products
Schottky Rectifier, 2 x 20 A
Base
common
cathode
2
TO-247AC
1
3
Anode
1
2
Anode
2
Common
cathode
PRODUCT SUMMARY
I_F(AV)
V_R
I_RM
2 x 20 A
60 V
100 mA at 125 °C
FEATURES
• 150 °C T_J operation
• Center tap TO-247 package
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified for industrial level
DESCRIPTION
The MBR4060WT center tap Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
Rectangular waveform
V_RRM
I_FSM
t_p = 5 µs sine
V_F
20 Apk, T_J = 125 °C (per leg)
T_J
Range
VALUES
40
60
1020
0.62
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
MBR4060WT
60
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
per leg
per device
I_F(AV)
Maximum peak one cycle
non-repetitive surge current per leg
I_FSM
Non-repetitive avalanche energy per leg
E_AS
Repetitive avalanche current per leg
I_AR
TEST CONDITIONS
T_C = 108 °C, 50 % duty cycle, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated V_RRM applied
T_J = 25 °C, I_AS = 1.5 A, L = 11.5 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
VALUES
20
40
1020
265
13
1.5
UNITS
A
mJ
A
Document Number: 93453
Revision: 21-Aug-08
For technical questions, contact: [e-mail]
www.vishay.com
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