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MBR4035PT_15 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual Common Cathode Schottky Rectifier
MBR4035PT, MBR4045PT, MBR4050PT, MBR4060PT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
3
2
1
TO-247AD (TO-3P)
PIN 1
PIN 3
PIN 2
CASE
PRIMARY CHARACTERISTICS
IF(AV)
40 A
VRRM
35 V, 45 V, 50 V, 60 V
IFSM
VF
TJ max.
400 A
0.60 V, 0.62 V
150 °C
Package
TO-247AD (TO-3P)
Diode variations
Common cathode
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max.10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR4035PT MBR4045PT MBR4050PT MBR4060PT UNIT
Maximum repetitive peak reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
VRRM
35
45
50
60
V
VRWM
35
45
50
60
V
VDC
35
45
50
60
V
Maximum average forward rectified current TC = 125 °C IF(AV)
40
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
400
A
Peak repetitive reverse surge current per diode
IRRM (1)
2.0
1.0
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
Operating junction temperature range
Storage temperature range
TJ
TSTG
-65 to +150
°C
-65 to +175
°C
Note
(1) 2.0 μs pulse width, f = 1.0 kHz
Revision: 17-Aug-15
1
Document Number: 88679
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000